SBCP56-10T1G

Single Bipolar Transistors Overview

The SBCP56-10T1G is an NPN Silicon Epitaxial transistor from the BCP56 series, designed for audio amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 80 Vdc and a collector-base voltage (VCBO) of 100 Vdc. The device supports a continuous collector current (IC) of 1 Adc with a peak current (ICM) of 2 Adc. Total power dissipation is rated at 1.5 W at 25°C ambient temperature, derating by 12 mW/°C above this threshold. The DC current gain (hFE) ranges from 40 to 160 when tested at IC = 150 mA and VCE = 2.0 V. The transition frequency (fT) is typically 130 MHz at IC = 10 mA and VCE = 5.0 Vdc. Operating and storage temperatures span from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed specifically for use in audio amplifier applications
• SOT-223 package construction absorbs thermal stress during wave or reflow soldering
• AEC-Q101 qualified and PPAP capable for automotive and unique site control requirements

Single Bipolar Transistors Applications

• Audio amplifier circuits
• Automotive electronics requiring AEC-Q101 qualification
• General purpose medium power surface mount applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and prefix requirements. The 'S' prefix indicates AEC-Q101 qualification and PPAP capability for automotive applications. Confirm whether the '1G' suffix corresponds to the 1000-unit tape and reel configuration as listed in the official onsemi ordering information table.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V collector-emitter voltage and 1 A continuous current rating is required. Ensure the application demands the specific hFE range of 40–160 defined for the -10 variant. Verify that the SOT-223 package dimensions and thermal resistance characteristics meet the board layout and heat dissipation constraints of the design.

Single Bipolar Transistors Part Context

This part belongs to the BCP56 series of NPN silicon epitaxial transistors manufactured by onsemi. It serves as the NPN complement to the PNP BCP53 series devices. The SBCP56-10T1G variant specifically denotes the version with a minimum DC current gain of 40, distinguishing it from other gain bins within the same family such as the -16 variant.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the BCP53T1G as the PNP complement. For direct NPN replacements within the same series, verify the specific gain bin requirements against variants like BCP56-16T1G. Check discontinuation status for older suffixes such as BCP56-10T3G before substituting.