SCT2750NYTB

Single FETs, MOSFETs Overview

The SCT2750NYTB is a second-generation planar Silicon Carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It features an N-channel enhancement mode configuration housed in a TO-268-3L surface-mount package with a tab for thermal management. The device supports a maximum drain-source voltage of 1700 V and a continuous drain current of 6 A. Key electrical parameters include a typical on-state resistance of 975 mΩ, a gate charge of 17 nC at 18 V, and a power dissipation rating of 57 W. It operates within a junction temperature range up to +175 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes second-generation planar SiC technology for improved performance over previous generations.
• Features fast switching speeds with low gate charge characteristics.
• Designed with a long creepage distance due to the absence of a center lead.
• Simple drive requirements compatible with standard control interfaces.

Single FETs, MOSFETs Applications

• High-efficiency industrial power supplies
• Uninterruptible Power Supplies (UPS)
• Solar micro-inverters

Single FETs, MOSFETs Procurement Notes

Verify the current supply status before design finalization, as official documentation indicates this specific part number may be subject to obsolescence or end-of-life transitions. Confirm that the TO-268-3L package dimensions align with your PCB footprint requirements. Ensure that the thermal design accounts for the 57 W power dissipation capability and the +175 °C maximum junction temperature limit under your specific operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage blocking capability and efficient switching are required in a compact surface-mount form factor. The 1700 V rating makes it suitable for applications exceeding standard silicon MOSFET limits. Consider the 975 mΩ on-resistance for conduction loss calculations. Verify compatibility with the driving circuit's voltage levels against the specified gate threshold and maximum ratings.

Single FETs, MOSFETs Part Context

This device belongs to the SCT2x series of Silicon Carbide MOSFETs from ROHM. The series focuses on leveraging SiC material properties for superior thermal and electrical performance compared to traditional silicon devices. The TO-268 package provides a balance between power handling capacity and surface-mount convenience for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult manufacturer resources for potential next-generation replacements if this unit is discontinued.

Single FETs, MOSFETs FAQ

What is the generation technology used in the SCT2750NYTB?

It utilizes second-generation planar SiC technology.

Does the TO-268 package include a center lead?

No, the package design features no center lead, which allows for a longer creepage distance.