SCT3105KRC14

$18.21

Description：SICFET N-CH 1200V 24A TO247-4L
Series：-
Mfr：Rohm Semiconductor
Package：Tube

SKU:1b5715e9f076 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

SCT3105KRC14 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 1200V 24A TO247-4L. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SCT3105KRC14

Description：SICFET N-CH 1200V 24A TO247-4L
Series：-
Mfr：Rohm Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：137mOhm @ 7.6A, 18V
Vgs(th) (Max) @ Id：5.6V @ 3.81mA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 18 V
Vgs (Max)：+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds：574 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：134W
Operating Temperature：175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for SCT3105KRC14

SCT3105KRC14

Single FETs, MOSFETs Overview

The SCT3105KRC14 is a third-generation N-channel Silicon Carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It utilizes a trench gate structure to achieve a typical drain-source on-state resistance of 105 mΩ and a continuous drain current of 24 A. The device supports a drain-source voltage of 1200 V with a total power dissipation of 134 W. It operates within a junction temperature range up to 175 °C and is housed in a TO-247-4L package.

Single FETs, MOSFETs Feature Summary

Trench gate structure reduces on-resistance compared to planar types
Fast switching speed and fast reverse recovery characteristics
Separate source pins for improved thermal and electrical performance

Single FETs, MOSFETs Applications

Solar power generation inverters
Industrial equipment power supplies
Server power supplies
Electric vehicle charging stations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'C14' against official ROHM documentation, as it may indicate a discontinued or non-recommended-for-new-design status. Confirm RoHS compliance and lead times directly with authorized distributors. Ensure the procurement channel provides valid traceability for automotive-grade alternatives if required.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency applications requiring low conduction losses. The TO-247-4L package facilitates easy paralleling and simple driving. Consider the 105 mΩ on-resistance for thermal management requirements. Verify compatibility with existing gate drive voltages and switching frequencies.

Single FETs, MOSFETs Part Context

This part belongs to the ROHM SCT3x series of third-generation SiC MOSFETs. The series offers 650V and 1200V options with various current ratings. The trench technology significantly lowers input capacitance and switching losses compared to previous generations.