SDS065J020W3-ISATH

Diode Arrays Overview

The SDS065J020W3-ISATH is a third-generation Silicon Carbide Schottky Barrier Diode manufactured by Hunan Sanan Semiconductor Co., Ltd. It features a TO-3PF-3L package with an insulation voltage of 2.5kV and operates within a junction temperature range of -55°C to 175°C. Key electrical specifications include a repetitive peak reverse voltage (VRRM) of 650V, a continuous forward current (IF) of 21A per leg at 25°C case temperature, and a typical forward voltage (VF) of 1.30V at 10A and 25°C. The device exhibits zero reverse recovery charge and a total capacitive charge (QC) of 29nC.

Diode Arrays Feature Summary

• Utilizes advanced third-generation Silicon Carbide technology for high efficiency and reliability
• Features an insulated TO-3PF package providing 2.5kV isolation voltage
• Exhibits no reverse recovery charge for high-speed switching performance
• Demonstrates temperature-independent switching behavior across the operating range

Diode Arrays Applications

• Industrial power supplies including Industrial UPS systems
• Battery chargers
• Solar inverters
• Switch mode power supplies

Diode Arrays Procurement Notes

Verify the manufacturer origin as Hunan Sanan Semiconductor Co., Ltd. rather than Luminus Devices Inc. Confirm the specific suffix ISATH corresponds to the tube packing type with a unit quantity of 300 EA. Ensure the component meets RoHS compliance requirements for industrial applications before procurement.

Diode Arrays Selection Notes

Select this component for designs requiring high-frequency operation and reduced cooling system size due to lower losses. Consider the 2.5kV insulation capability for safety-critical isolation needs. Evaluate thermal resistance values against the specific heat sink design to ensure junction temperatures remain within the -55°C to 175°C operational limits during continuous conduction.

Diode Arrays Part Context

This part belongs to the SDS065J series of Silicon Carbide Schottky Barrier Diodes. It represents a shift from traditional silicon-based solutions, offering superior performance in terms of higher operation temperatures and lower switching losses. The TO-3PF-3L package is designed for robust mounting and efficient thermal management in high-power industrial environments.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Does the device exhibit reverse recovery charge?

No, the Schottky barrier structure ensures there is no reverse recovery charge at turn-off.

What is the insulation voltage of the package?

The insulated TO-3PF package provides an insulation voltage of 2.5kV.