SDT10S30

Description：DIODE SIL CARB 300V 10A PGTO2202
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Tube

SKU:9fe11a3afc71 Category: Single Diodes Brand: Infineon Technologies

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Product introduction

SDT10S30 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SIL CARB 300V 10A PGTO2202. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for SDT10S30

Description：DIODE SIL CARB 300V 10A PGTO2202
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：300 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：200 µA @ 300 V
Capacitance @ Vr, F：600pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-220-2
Supplier Device Package：PG-TO220-2-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for SDT10S30

SDT10S30

Single Diodes Overview

The SDT10S30 is a Silicon Carbide Schottky diode from Infineon Technologies, housed in a PG-TO220-2-2 package. It features a maximum repetitive peak reverse voltage of 300 V and a continuous forward current rating of 10 A at a case temperature of 100°C. The device exhibits zero reverse recovery time and operates within a junction temperature range of -55°C to +175°C. Key electrical characteristics include a typical total capacitive charge of 23 nC and a maximum thermal resistance from junction to case of 2.3 K/W.

Single Diodes Feature Summary

Utilizes Silicon Carbide semiconductor material for high-performance switching behavior.
Features zero reverse recovery time with no influence from temperature changes on switching characteristics.
Eliminates forward recovery effects during operation.

Single Diodes Applications

Power Factor Correction circuits
High-frequency rectification applications

Single Diodes Procurement Notes

Verify the specific ordering code Q67040-S4447 when sourcing this component. Confirm that the PG-TO220-2-2 package matches your board layout requirements. Check the datasheet for derating curves regarding continuous forward current based on case temperature limits. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values.

Single Diodes Selection Notes

Select this component for designs requiring fast switching speeds without reverse recovery losses. Consider the 300 V blocking capability and 10 A current handling for medium-power applications. Evaluate the thermal performance against your system's heat dissipation capabilities. Compare the low capacitive charge against other diodes to optimize efficiency in high-frequency topologies.

Single Diodes Part Context

This part belongs to the thinQ! SiC Schottky Diode series by Infineon Technologies. It shares specifications with the SDP10S30, which uses a P-TO220-3 package. Both devices utilize the same silicon carbide technology and electrical ratings but differ in physical pin configuration and mounting style.