SDT10S60

Single Diodes Overview

The SDT10S60 is a silicon carbide Schottky diode from Infineon Technologies, housed in a PG-TO220-2-2 package. It features a maximum repetitive peak reverse voltage of 600 V and a continuous forward current rating of 10 A at a case temperature of 100°C. The device exhibits a typical forward voltage of 1.5 V at 10 A and 25°C, rising to 1.7 V at 150°C. Total capacitive charge is specified as 29 nC under defined switching conditions. Junction-to-case thermal resistance is 2 K/W, with an operating junction temperature range spanning -55°C to +175°C.

Single Diodes Feature Summary

• Utilizes silicon carbide semiconductor material for high-performance rectification
• Eliminates reverse recovery charge and associated switching losses
• Maintains stable switching behavior independent of temperature variations
• Exhibits no forward recovery effect during conduction transitions

Single Diodes Applications

• High-frequency power conversion circuits
• Power factor correction stages
• DC-DC converter topologies requiring low loss
• Solar micro-inverter implementations

Single Diodes Procurement Notes

Verify the specific ordering code Q67040S4643 against current manufacturer availability lists. Confirm that the PG-TO220-2-2 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions accommodate the 2 K/W junction-to-case resistance specification for reliable operation within the stated temperature limits.

Single Diodes Selection Notes

Select this component when designing systems requiring zero reverse recovery characteristics at 600 V blocking levels. The 10 A current rating suits moderate power applications where silicon carbide efficiency gains justify the material choice. Evaluate thermal constraints carefully, as performance depends on maintaining junction temperatures below 175°C during surge events.

Single Diodes Part Context

This device belongs to Infineon's thinQ! SiC Schottky Diode family, representing early commercialization of silicon carbide technology for general-purpose rectification. It serves as a benchmark for switching behavior in high-voltage discrete applications, offering superior thermal conductivity compared to traditional silicon counterparts.

Single Diodes Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate other 600 V SiC Schottky diodes from various manufacturers based on matching current ratings, package compatibility, and switching charge specifications.