SI1065X-T1-GE3

$0.24

Description：MOSFET P-CH 12V 1.18A SC89-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:4f4322d053a9 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI1065X-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 12V 1.18A SC89-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI1065X-T1-GE3

Description：MOSFET P-CH 12V 1.18A SC89-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：1.18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.8 nC @ 5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：480 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：236mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-89 (SOT-563F)
Package / Case：SOT-563, SOT-666

Single FETs, MOSFETs datasheet and documents for SI1065X-T1-GE3

SI1065X-T1-GE3

Single FETs, MOSFETs Overview

The SI1065X-T1-GE3 is a single N-channel enhancement mode MOSFET from the Vishay Siliconix TrenchFET series. It utilizes silicon technology and is housed in an SC-89-6 surface-mount package. The device features a drain-source breakdown voltage of 12 V and supports a continuous drain current of 1.18 A. Its on-resistance is specified at 130 mΩ when driven at 4.5 V. Power dissipation capacity is rated at 0.236 W, with an operating temperature range spanning from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power transistor technology for optimized performance characteristics.

Single FETs, MOSFETs Applications

Low-voltage DC-to-DC converter circuits
Power management applications requiring small form factor components

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing lot requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to soldering. Validate package marking against official datasheet specifications to prevent counterfeit substitution during procurement processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs necessitating a compact SC-89-6 footprint with low voltage ratings. Consider the 130 mΩ on-resistance for efficiency calculations at moderate current levels. Evaluate thermal management strategies given the limited power dissipation rating. Compare against alternative TrenchFET devices if higher current or voltage capabilities are required for the target application.

Single FETs, MOSFETs Part Context

This part belongs to the SI1 series of N-channel MOSFETs manufactured by Vishay Siliconix. The series emphasizes low on-resistance and fast switching speeds within small surface-mount packages. The SC-89-6 package provides a compact solution for space-constrained electronic designs requiring reliable semiconductor switching capabilities.