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SI1304BDL-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 900MA SC70-3. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SI1304BDL-T1-E3 is a single-channel N-Channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 0.9 A at a case temperature of 25 °C, with an on-state resistance of 0.27 Ω at VGS = 4.5 V. Packaged in a lead-free SC-70 (SOT-323) housing, it supports surface mount assembly.
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The '-E3' suffix indicates lead-free manufacturing, while '-GE3' denotes both lead-free and halogen-free status. Confirm package type matches the required pin configuration before procurement.
Select this component for designs prioritizing small form factors due to its SC-70 footprint. Evaluate thermal constraints carefully, as the 3-pin package exhibits high junction-to-ambient thermal resistance. Ensure gate drive voltages align with specified thresholds for optimal on-resistance characteristics.
This part belongs to the Vishay Siliconix Si1304BDL series of N-Channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within a compact SC-70 package. The device is designed for general-purpose switching and amplification in portable electronics.
Si1304BDL-T1-GE3
The -E3 suffix indicates the device is lead-free and compliant with RoHS directives. The -GE3 suffix indicates the device is both lead-free and halogen-free according to IEC 61249-2-21.
The datasheet specifies the SC-70 (3-Leads) package. Application notes indicate that 6-lead variants offer significantly lower thermal resistance compared to the 3-lead version used in this part number.
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