SI2365EDS-T1-GE3

$0.30

Description：MOSFET P-CH 20V 5.9A TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:64874d71b95d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI2365EDS-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 5.9A TO236. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI2365EDS-T1-GE3

Description：MOSFET P-CH 20V 5.9A TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1W (Ta), 1.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SI2365EDS-T1-GE3

SI2365EDS-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI2365EDS-T1-GE3 is a P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -20 V drain-source voltage and a continuous drain current of -5.9 A at TC = 25 °C. The device offers a maximum on-resistance of 0.032 Ω at VGS = -4.5 V and -4 A. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-236 (SOT-23) surface-mount package.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for optimized performance
Built-in electrostatic discharge protection with typical rating of 3000 V
100% gate resistance tested for reliability

Single FETs, MOSFETs Applications

Load switches in portable devices
DC/DC converters in consumer electronics
Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component matches the exact Vishay datasheet number 63199. Ensure the SOT-23 package dimensions align with your PCB layout requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring efficient switching. Evaluate thermal constraints carefully, as power dissipation decreases significantly at higher ambient temperatures. Verify that the gate drive voltage meets the minimum threshold for optimal on-resistance performance in your specific circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si2365EDS series of P-channel MOSFETs. It is designed for general-purpose switching applications where compact size and high efficiency are required. The device represents an evolution in small-signal power management solutions within the industry.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for qualified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package types to ensure functional compatibility without redesigning the host circuit.