SI3410DV-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix Si3410DV-T1-E3 is a single N-channel MOSFET utilizing TrenchFET technology, housed in a TSOP-6 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current capacity of 8 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.0195 Ω at VGS = 10 V and 0.023 Ω at VGS = 4.5 V. Total gate charge is typically 9.2 nC at VGS = 4.5 V. Operating junction temperatures range from -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 definition
• RoHS Directive 2002/95/EC compliant manufacturing

Single FETs, MOSFETs Applications

• Notebook load switching
• Low current DC-to-DC conversion

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The -E3 suffix indicates lead-free composition, while -GE3 denotes both lead-free and halogen-free status. Confirm that the requested part number matches the exact electrical specifications and package dimensions required for the target circuit design before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component based on its low on-resistance characteristics suitable for efficient power management. Ensure the thermal environment supports the specified power dissipation limits. Verify that the gate drive voltage aligns with the RDS(on) specifications provided for optimal conduction efficiency. Consider the TSOP-6 package constraints regarding PCB land pattern and mounting orientation during layout.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix Si3410DV series of N-channel enhancement mode field effect transistors. Manufactured using advanced silicon planar trench technology, it offers high density and fast switching capabilities. The product line is designed for portable applications requiring compact footprints and reliable operation under varying thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Cross-reference datasheets for alternative TSOP-6 N-channel MOSFETs with matching 30 V ratings and comparable RDS(on) values. Ensure pinout compatibility and verify that thermal resistance parameters meet system requirements when substituting.