SI4431CDY-T1-E3

$0.89

Description：MOSFET P-CH 30V 9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:41c3758ccea2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4431CDY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 9A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4431CDY-T1-E3

Description：MOSFET P-CH 30V 9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1006 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：4.2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4431CDY-T1-E3

SI4431CDY-T1-E3

Single FETs, MOSFETs Overview

The SI4431CDY-T1-E3 is a P-Channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage of -30 V and a continuous drain current of -9 A at 25 °C case temperature. The on-state resistance is specified as 0.032 Ω maximum at VGS = -10 V and 0.049 Ω maximum at VGS = -4.5 V. Total gate charge is typically 38 nC at VGS = -10 V. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 4.2 W.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
Single channel configuration
Enhancement mode operation

Single FETs, MOSFETs Applications

Load switch
Battery switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm compliance attributes. The E3 suffix indicates lead-free status, while GE3 denotes both lead-free and halogen-free construction. Confirm that the selected variant aligns with project material requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-foot thermal resistances. Ensure gate drive voltages remain within the ±20 V absolute maximum rating. Verify that the required on-state resistance at the intended gate drive level meets circuit efficiency targets.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SI4 series of P-Channel MOSFETs. It is manufactured using silicon technology and is designed for surface mount applications. The product line utilizes TrenchFET technology to achieve low on-resistance characteristics suitable for power switching applications.