Single FETs, MOSFETs SI6433BDQ-T1-E3 product image

SI6433BDQ-T1-E3

$0.77
  • Description:MOSFET P-CH 12V 4A 8TSSOP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:64a48c7145ed Category: Brand:

  
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SI6433BDQ-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 12V 4A 8TSSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI6433BDQ-T1-E3

  • Description:MOSFET P-CH 12V 4A 8TSSOP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:40mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):1.05W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-TSSOP
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)

Single FETs, MOSFETs datasheet and documents for SI6433BDQ-T1-E3

SI6433BDQ-T1-E3

Single FETs, MOSFETs Overview

The SI6433BDQ-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-lead TSSOP surface-mount package. The device features a drain-source breakdown voltage of -20 V and a continuous drain current rating of -5.7 A. Key electrical parameters include a maximum on-resistance of 22 milliohms at a gate-source voltage of -10 V, and a gate charge of 9 nanocoulombs. It operates within a temperature range of -55 to +150 degrees Celsius.

Single FETs, MOSFETs Feature Summary

  • Dual channel configuration for integrated power switching applications
  • TrenchFET technology providing low on-resistance characteristics
  • Enhancement mode operation with high speed switching capabilities

Single FETs, MOSFETs Applications

  • Power distribution circuits
  • Load switches
  • DC-DC converter synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer before procurement. Confirm that the TSSOP-8 footprint matches your PCB layout requirements. Check for any product change notifications or obsolescence notices associated with this part number to ensure long-term supply availability.

Single FETs, MOSFETs Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage power management. Ensure the thermal design accommodates the specified power dissipation limits under expected load conditions. Verify that the gate drive voltage levels are compatible with the -10 V threshold for optimal on-state performance.

Single FETs, MOSFETs Part Context

This component belongs to the SI64xx series of dual MOSFETs from Vishay Siliconix. The series is designed for general-purpose power switching applications requiring small form factors. The TrenchFET generation offers improved efficiency compared to standard planar technologies.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the -20 V voltage rating, -5.7 A current capacity, and TSSOP-8 package dimensions.

SI6433BDQ-T1-E3SI6433BDQ-T1-E3
$0.77
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