SI7384DP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7384DP-T1-GE3 is a single N-channel TrenchFET Gen II Power MOSFET housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage rating of 30 V and a continuous drain current of 18 A at 25 °C. The device exhibits a maximum on-state resistance of 0.0085 Ω at VGS = 10 V and 0.0125 Ω at VGS = 4.5 V. Designed for high efficiency, it incorporates reduced gate charge characteristics with a typical total gate charge of 12 nC.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET Gen II technology optimized for PWM applications to achieve high switching efficiency.
• Incorporates a low-profile PowerPAK SO-8 package that provides thermal performance equivalent to DPAK packages while maintaining standard SO-8 footprint compatibility.
• Features reduced gate charge specifications to facilitate fast switching speeds and minimize drive power requirements.

Single FETs, MOSFETs Applications

• High-side DC/DC conversion
• Notebook computer power management circuits
• Desktop system power distribution
• Server power supply architectures

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components. The GE3 designation indicates the part is both lead-free and halogen-free compliant. Confirm RoHS and REACH SVHC status through official manufacturer documentation prior to integration into regulated assemblies.

Single FETs, MOSFETs Selection Notes

Evaluate the device based on its low on-resistance values at varying gate voltages to ensure adequate conduction efficiency within the target circuit design. Consider the thermal resistance ratings and package dimensions to verify compatibility with the intended PCB land patterns and heat dissipation strategies.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix Si7384DP series, which focuses on reducing gate charge for improved switching performance. The product line utilizes advanced silicon processes to deliver high current handling capabilities within compact surface-mount packaging suitable for dense electronic layouts.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists the Si7384DP-T1-E3 as the lead-free alternative to the Si7384DP-T1-GE3. Verify electrical parameter equivalence and package compatibility before substituting parts in existing designs.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature range for this MOSFET?

The operating junction and storage temperature range extends from -55 °C to +150 °C.

How does the PowerPAK SO-8 package compare thermally to a standard SO-8?

The PowerPAK SO-8 offers significantly lower thermal resistance compared to a standard SO-8, providing performance comparable to a DPAK package despite sharing the same footprint.