SIHG085N60EF-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHG085N60EF-GE3 is a single N-channel power MOSFET utilizing fourth-generation E series technology. It features a TO-247AC package with a drain-source voltage rating of 600 V and a continuous drain current of 34 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.073 Ω at VGS = 10 V and ID = 17 A, with a maximum gate charge of 63 nC. It supports an operating junction temperature range from -55 °C to +150 °C and includes avalanche energy ratings for unclamped inductive switching.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology designed to reduce switching and conduction losses through low figure of merit and effective capacitance.
• Integrated fast body diode optimized for high dv/dt performance and reverse recovery characteristics.
• Rated for repetitive unclamped inductive switching (UIS) avalanche energy applications.

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• High-intensity discharge lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance status prior to procurement. Confirm that the TO-247AC package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions account for the specified linear derating factor and junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust 600 V blocking capability combined with low on-resistance for efficiency. The TO-247AC package facilitates efficient heat dissipation for high-current applications. Consider the UIS rating if the application involves inductive loads prone to voltage spikes exceeding standard breakdown limits without external clamping.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix EF Series Power MOSFET lineup, which integrates fast body diodes. It represents the fourth generation of E series technology, focusing on optimizing the trade-off between conduction losses and switching speed. The device is manufactured using silicon planar trench technology.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Vishay Siliconix TO-247AC N-channel MOSFETs within the same 600 V / 34 A parameter class. Verify pinout compatibility and thermal resistance specifications before substituting with devices from alternative manufacturers or different product families.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device is rated for a single pulse avalanche energy of 173 mJ under test conditions of VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 3.5 A.

Does the device support logic level gate drive?

The datasheet specifies RDS(on) testing at VGS = 10 V. While the threshold voltage ranges from 3.0 V to 5.0 V, full enhancement typically requires higher gate voltages than standard logic levels provide.