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SIHS36N50D-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 36A SUPER-247. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SIHS36N50D-E3 is a single N-channel enhancement mode power MOSFET housed in a Super-247 through-hole package. It features a maximum drain-source voltage of 500 V and a continuous drain current of 36 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.130 Ω at VGS = 10 V and ID = 18 A, with a total gate charge of 125 nC. Maximum power dissipation reaches 446 W, and the operating junction temperature range spans from -55 °C to +150 °C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package dimensions match the Super-247 outline drawings provided in document number 91365. Ensure ordering suffixes align with lead-free and halogen-free material categorization standards defined by Vishay Semiconductors.
Evaluate thermal management requirements based on the linear derating factor of 3.6 W/°C above 25 °C case temperature. Consider the maximum junction-to-case thermal resistance of 0.28 °C/W for heatsink calculations. Verify that gate drive voltages remain within the ±30 V absolute maximum ratings to prevent dielectric breakdown during operation.
This component belongs to the D Series Power MOSFET lineup manufactured by Vishay Siliconix. It utilizes silicon technology optimized for high-voltage applications. The Super-247 package provides robust mechanical stability and efficient heat dissipation capabilities suitable for demanding industrial environments.
Cross-reference alternative part numbers only if they share identical pin configurations, voltage ratings, and thermal characteristics. Verify compatibility with existing PCB layouts and mounting hardware before substitution.
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