Single FETs, MOSFETs SIHS36N50D-E3 product image

SIHS36N50D-E3

$2.97
  • Description:MOSFET N-CH 500V 36A SUPER-247
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:63ce012a970e Category: Brand:

  
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SIHS36N50D-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 36A SUPER-247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHS36N50D-E3

  • Description:MOSFET N-CH 500V 36A SUPER-247
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:130mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:3233 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):446W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:SUPER-247™ (TO-274AA)
  • Package / Case:TO-274AA

Single FETs, MOSFETs datasheet and documents for SIHS36N50D-E3

SIHS36N50D-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHS36N50D-E3 is a single N-channel enhancement mode power MOSFET housed in a Super-247 through-hole package. It features a maximum drain-source voltage of 500 V and a continuous drain current of 36 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.130 Ω at VGS = 10 V and ID = 18 A, with a total gate charge of 125 nC. Maximum power dissipation reaches 446 W, and the operating junction temperature range spans from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Optimized design for low area specific on-resistance and reduced capacitive switching losses
  • High body diode ruggedness with avalanche energy rating capability
  • Low figure-of-merit combining on-resistance and gate charge for fast switching efficiency
  • Simple gate drive circuitry requirements

Single FETs, MOSFETs Applications

  • Consumer electronics displays including LCD or Plasma TV
  • Server and telecom power supplies such as SMPS
  • Industrial welding, induction heating, and motor drives
  • Battery chargers

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package dimensions match the Super-247 outline drawings provided in document number 91365. Ensure ordering suffixes align with lead-free and halogen-free material categorization standards defined by Vishay Semiconductors.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on the linear derating factor of 3.6 W/°C above 25 °C case temperature. Consider the maximum junction-to-case thermal resistance of 0.28 °C/W for heatsink calculations. Verify that gate drive voltages remain within the ±30 V absolute maximum ratings to prevent dielectric breakdown during operation.

Single FETs, MOSFETs Part Context

This component belongs to the D Series Power MOSFET lineup manufactured by Vishay Siliconix. It utilizes silicon technology optimized for high-voltage applications. The Super-247 package provides robust mechanical stability and efficient heat dissipation capabilities suitable for demanding industrial environments.

Single FETs, MOSFETs Replacement Considerations

Cross-reference alternative part numbers only if they share identical pin configurations, voltage ratings, and thermal characteristics. Verify compatibility with existing PCB layouts and mounting hardware before substitution.

SIHS36N50D-E3SIHS36N50D-E3
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