SISHA12ADN-T1-GE3

$0.76

Description：MOSFET N-CH 30V 22A/25A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f74cd1de96ec Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SISHA12ADN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 22A/25A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SISHA12ADN-T1-GE3

Description：MOSFET N-CH 30V 22A/25A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：2070 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8SH
Package / Case：PowerPAK® 1212-8SH

Single FETs, MOSFETs datasheet and documents for SISHA12ADN-T1-GE3

SISHA12ADN-T1-GE3

Single FETs, MOSFETs Overview

The SiSHA12ADN-T1-GE3 is a Vishay Siliconix N-channel 30 V (D-S) MOSFET utilizing TrenchFET® Gen IV technology. It features a maximum drain-source on-state resistance of 4.3 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 25 A at TC = 25 °C and operates within a junction temperature range of -55 to +150 °C. Packaged in a leadless PowerPAK 1212-8SH, it includes 100% Rg and UIS testing for reliability.

Single FETs, MOSFETs Feature Summary

TrenchFET® Gen IV power MOSFET architecture
100% Rg and UIS tested
Leadless PowerPAK 1212-8SH package

Single FETs, MOSFETs Applications

Switch mode power supplies
Personal computers and servers
Telecom bricks
VRMs and POL

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance details. Confirm that the component matches the required PowerPAK 1212-8SH package dimensions. Ensure thermal management designs account for the specified junction-to-case and junction-to-ambient resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current density in compact footprints. Consider the gate charge characteristics for switching speed requirements. Evaluate thermal performance based on the specific PCB layout and ambient temperature constraints defined in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiSHA series of N-channel MOSFETs. It utilizes the PowerPAK 1212-8SH surface-mount package designed for efficient heat dissipation. The device is manufactured using silicon technology and complies with RoHS directives.