SISS64DN-T1-GE3

$1.20

Description：MOSFET N-CH 30V 40A PPAK1212-8S
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:72df081ca8ec Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SISS64DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 40A PPAK1212-8S. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SISS64DN-T1-GE3

Description：MOSFET N-CH 30V 40A PPAK1212-8S
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：3420 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：57W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8S
Package / Case：PowerPAK® 1212-8S

Single FETs, MOSFETs datasheet and documents for SISS64DN-T1-GE3

SISS64DN-T1-GE3

Single FETs, MOSFETs Overview

The SiSS64DN is a Vishay Siliconix N-Channel MOSFET featuring TrenchFET Gen IV technology. It offers a 30 V drain-source voltage and a maximum on-resistance of 2.1 mΩ at VGS = 10 V, or 2.86 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 40 A and handles pulsed currents up to 100 A. Total gate charge is typically 21 nC at VGS = 4.5 V. Packaged in a leadless PowerPAK 1212-8S, it provides low thermal resistance for high-power density applications.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET structure
Optimized gate charge parameters reduce switching losses
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Synchronous rectification
High power density DC/DC converters
Voltage regulator modules (VRMs)
Synchronous buck converters
Load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm manufacturing origin and compliance status. The -GE3 variant denotes lead-free and halogen-free construction. The -UE3 variant includes Blind Land Rework (BLR) and In-Order Lead (IOL) capabilities. The -BE3 variant indicates an alternate manufacturing location. Confirm package dimensions against the PowerPAK 1212-8S outline before integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction loss in compact form factors. The 40 A current rating suits high-density power stages. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on). Consider the exposed copper terminal requirements for soldering processes, as manual iron rework is not recommended for this leadless package type.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiSS series of N-Channel MOSFETs. It utilizes the PowerPAK 1212-8S surface-mount package, designed for efficient thermal dissipation and minimal PCB footprint. The device integrates body diode characteristics suitable for synchronous applications, supporting modern power management architectures.