Single FETs, MOSFETs SL03P10-TP product image

SL03P10-TP

$0.12
  • Description:Interface
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk

SKU:98fd41a03674 Category: Brand:

  
  • Quantity
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SL03P10-TP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is Interface. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SL03P10-TP

  • Description:Interface
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:3A
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:286mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):830mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3L
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SL03P10-TP

SL03P10-TP

Single FETs, MOSFETs Overview

The SL03P10-TP is a P-Channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Trench MV technology and is housed in a SOT-23-3L package. Key electrical parameters include a Drain-Source Voltage (VDS) of -100 V, a Continuous Drain Current (ID) of -3 A at 25°C, and a Gate-Source Voltage (VGS) rating of ±20 V. The device features a maximum Drain-Source On-Resistance (RDS(on)) of 335 mΩ at VGS=-4.5V and ID=-0.5A. It operates within a junction temperature range of -55°C to +150°C with a thermal resistance of 90°C/W.

Single FETs, MOSFETs Feature Summary

  • Utilizes Trench MV MOSFET technology for optimized performance
  • RoHS compliant and halogen-free green device construction
  • Epoxy material meets UL 94 V-0 flammability rating
  • Moisture Sensitivity Level 1 classification

Single FETs, MOSFETs Applications

  • Power management circuits requiring compact packaging
  • Low voltage DC-DC converter designs
  • Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the authenticity of the SL03P10-TP component through authorized MCC distributors or direct procurement channels. Counterfeit semiconductor parts pose significant risks; ensure traceability and adherence to handling standards. Confirm that the ordering suffix indicates RoHS compliance. Review the manufacturer's general terms and conditions regarding liability and warranty coverage before purchase.

Single FETs, MOSFETs Selection Notes

Select the SL03P10-TP when a P-Channel MOSFET with a -100 V breakdown voltage is required in a small SOT-23-3L footprint. Consider the -3 A continuous current limit and 335 mΩ on-resistance characteristics for load requirements. Ensure the application environment supports the specified operating junction temperature range and thermal dissipation capabilities provided by the package.

Single FETs, MOSFETs Part Context

This component belongs to the Micro Commercial Components (MCC) discrete semiconductor portfolio. It is specifically categorized as a P-Channel MOSFET designed for surface-mount applications. The product documentation confirms its compliance with environmental directives and safety standards relevant to electronic component manufacturing.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the source material.

Single FETs, MOSFETs FAQ

What is the maximum power dissipation for the SL03P10-TP?

The maximum power dissipation is 1.4 W, based on the maximum junction temperature using junction-ambient thermal resistance.

Does the SL03P10-TP support reverse recovery operations?

Yes, the datasheet lists Reverse Recovery Time (trr) and Reverse Recovery Charge (Qrr) under Diode Characteristics, indicating body diode switching properties.

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