Single FETs, MOSFETs SQJ180EP-T1_GE3 product image

SQJ180EP-T1_GE3

$2.20
  • Description:AUTOMOTIVE N-CHANNEL 80 V (D-S)
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5c5a216b169f Category: Brand:

  
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SQJ180EP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is AUTOMOTIVE N-CHANNEL 80 V (D-S). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJ180EP-T1_GE3

  • Description:AUTOMOTIVE N-CHANNEL 80 V (D-S)
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:248A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6645 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):500W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SQJ180EP-T1_GE3

SQJ180EP-T1_GE3

Single FETs, MOSFETs Overview

The SQJ180EP-T1_GE3 is an automotive-grade N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a drain-source voltage of 80 V and a continuous drain current of 248 A at 25 °C case temperature. The device offers a typical on-resistance of 3.0 mΩ at VGS = 10 V. It is housed in a PowerPAK SO-8L package with a junction-to-case thermal resistance of 0.3 °C/W. Qualified under AEC-Q101 standards, it supports operation up to +175 °C.

Single FETs, MOSFETs Feature Summary

  • TrenchFET Gen IV power MOSFET architecture
  • Optimized Qgd/Qgs ratio for switching performance
  • AEC-Q101 qualified for automotive reliability
  • 100% Rg and UIS tested

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-current DC-DC converter stages
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix (e.g., -T1_GE3) against official documentation to confirm packaging and material compliance details. Ensure that the application environment respects the absolute maximum ratings, particularly regarding pulsed currents and avalanche energy limits. Confirm PCB layout requirements match the PowerPAK SO-8L land pattern specifications provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are required in an automotive context. The low thermal resistance facilitates efficient heat dissipation in compact designs. Evaluate the gate charge characteristics against driver capabilities to ensure optimal switching speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It shares the PowerPAK SO-8L footprint with other variants in the lineup but differs significantly in voltage and current ratings. The series is designed specifically for robust automotive environments requiring high reliability and thermal performance.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include parts like the SQJ190EP or SQJ170EP if voltage or current ratings differ slightly. Verify pinout compatibility and thermal characteristics before swapping. Cross-referencing with other manufacturers requires careful evaluation of RDS(on) and package dimensions.

SQJ180EP-T1_GE3SQJ180EP-T1_GE3
$2.20
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