SS9014ABU

Single Bipolar Transistors Overview

The SS9014ABU is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It is housed in a TO-92-3 through-hole package designed for general-purpose amplification and switching applications. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 100 mA with a power dissipation capability of 450 mW. It features a transition frequency (fT) of 270 MHz and a DC current gain (hFE) ranging from a minimum of 60 to a maximum of 1000.

Single Bipolar Transistors Feature Summary

• High DC current gain with good linearity suitable for low-noise pre-amplifier stages
• Epitaxial silicon construction providing high total power dissipation capabilities
• Complementary pairing available with the PNP SS9015 transistor

Single Bipolar Transistors Applications

• Low noise audio pre-amplification circuits
• General-purpose signal amplification
• Digital switching applications requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify component authenticity as the SS9014ABU is listed as obsolete or discontinued by the manufacturer. Confirm availability through authorized distributors or secondary market suppliers. Ensure that replacement components maintain identical pinout configurations and electrical specifications to guarantee circuit compatibility without redesign.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a standard NPN small-signal transistor with moderate gain and voltage ratings. Consider the TO-92-3 package constraints for thermal management given the 450 mW dissipation limit. Evaluate the hFE spread when designing bias networks to ensure consistent performance across different units within the specified gain range.

Single Bipolar Transistors Part Context

The SS9014 series belongs to onsemi's lineup of general-purpose NPN bipolar junction transistors. These devices are widely utilized in consumer electronics and industrial control systems due to their reliability and cost-effectiveness. The ABU suffix typically denotes specific binning or packaging variations within the broader SS9014 family, adhering to standard industry form factors.

Single Bipolar Transistors Replacement Considerations

• SS9014BBU
• SS9014BTA

Single Bipolar Transistors FAQ

What is the complementary transistor to the SS9014?

The SS9015 is the complementary PNP transistor to the SS9014 NPN series.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is rated at 45 V.

Is the SS9014ABU suitable for high-frequency RF applications?

With a transition frequency of 270 MHz, it is suitable for audio frequencies and general-purpose switching, but not for high-frequency RF operations.