SSM5G10TU(TE85L,F)

Single FETs, MOSFETs Overview

The SSM5G10TU(TE85L,F) is a P-channel MOSFET from Toshiba's SSM Series, housed in the UFM-3 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 0.213 A. The device exhibits a maximum on-resistance of 0.213 Ω at a gate-source voltage of -4 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 150 mW.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement mode MOSFET structure
• Integrated Schottky barrier diode configuration
• Compact surface-mount packaging for high-density mounting

Single FETs, MOSFETs Applications

• Small-signal switching applications
• Portable electronic devices
• Notebook PC power supply circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm reel specifications and tape-and-reel dimensions. Ensure the component matches the required UFM-3 package outline and electrical characteristics before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching tasks requiring integrated protection. The combination of P-channel operation and an internal Schottky diode simplifies circuit design. Verify that the 20 V rating and 0.213 A current capacity align with the target application's load requirements.

Single FETs, MOSFETs Part Context

This part belongs to the SSM Series, which provides small-signal MOSFETs designed for compact electronics. The series supports various configurations including single, dual, and mixed-type arrangements. The SSM5G10TU variant specifically integrates a P-channel MOSFET with a Schottky barrier diode for enhanced functionality.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution lists for verified equivalents. Cross-reference absolute maximum ratings and pinout compatibility when considering alternative manufacturers.