STD65N3LLH5

Single FETs, MOSFETs Overview

The STD65N3LLH5 is a single N-channel Power MOSFET developed using STMicroelectronics’ STripFET V technology. It features a DPAK-3 (TO-252-3) surface-mount package and silicon construction. Key electrical parameters include a drain-source breakdown voltage of 30 V, a continuous drain current of 65 A, and a maximum on-resistance of 6 mOhms. The device operates with a gate-source voltage range of -22 V to 22 V and a threshold voltage of 1.8 V. Gate charge is 8 nC, with rise and fall times of 11.2 ns and 6 ns respectively. It supports a power dissipation of 50 W and functions within a temperature range of -55 C to +175 C.

Single FETs, MOSFETs Feature Summary

• Optimized for extremely low on-state resistance to improve efficiency.
• Features very low switching gate charge for reduced drive losses.
• Provides high avalanche ruggedness for robust operation.

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Automotive power management circuits
• DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to the presence of counterfeits in the market. Confirm that the received part matches the specific DPAK-3 package and marking codes associated with the STD65N3LLH5 designation. Check datasheet revisions to ensure compatibility with current design requirements, as manufacturing processes may evolve over time.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current solution is required in a compact surface-mount form factor. The STripFET V technology offers an optimized figure of merit balancing conduction and switching losses. Ensure thermal management strategies account for the 50 W power dissipation capability in the TO-252-3 package under expected operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to the STDxxN3LLH5 series of N-channel Power MOSFETs from STMicroelectronics. The series utilizes advanced planar cell technology to achieve superior performance metrics compared to previous generations. It is designed for applications demanding high reliability and efficiency in power conversion stages.

Single FETs, MOSFETs Replacement Considerations

The STU65N3LLH5 is a pin-compatible alternative featuring a TO-251-3 through-hole package with similar electrical characteristics, though it exhibits a higher on-resistance of 9.7 mOhms. Verify package footprint differences before substitution.