STF10N62K3

Single FETs, MOSFETs Overview

The STF10N62K3 is an N-channel enhancement mode power MOSFET manufactured by STMicroelectronics using the SuperMESH3 technology. It features a TO-220FP through-hole package with three pins. Key electrical parameters include a drain-source breakdown voltage (Vds) of 620 V, a continuous drain current (Id) of 8.4 A, and a maximum on-resistance (Rds(on)) of 680 mΩ at Vgs = 10 V. The device operates within a temperature range of -55 °C to +150 °C, with a gate-source voltage limit of ±30 V and a typical gate charge of 42 nC.

Single FETs, MOSFETs Feature Summary

• SuperMESH3 technology provides extremely low on-resistance and superior dynamic performance.
• High avalanche capability ensures robustness in demanding switching applications.
• Zener protection integrated between gate and source terminals for enhanced reliability.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Motor control circuits
• Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and package variant against the official datasheet before procurement. Confirm that the component meets RoHS compliance requirements for your region. Check for obsolescence status as older MDmesh K3 series parts may have limited availability or end-of-life notices from the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and moderate current handling are required in through-hole designs. Compare Rds(on) and gate charge values against alternative packages like TO-220 or D2PAK if board space constraints differ. Ensure the thermal management solution supports the specified power dissipation capabilities under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh K3 family of power MOSFETs, representing an evolution of ST's vertical structure technology. It is designed to replace previous generations like the standard MDmesh series, offering improved efficiency and switching speeds while maintaining compatibility with existing footprint designs common in industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other STF10N62 variants with identical pinouts and electrical ratings. Verify that any replacement maintains the same SuperMESH3 technology generation to ensure equivalent avalanche ruggedness and switching characteristics without redesigning the gate drive circuitry.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the STF10N62K3?

The maximum operating junction temperature is +150 °C.

Does the STF10N62K3 include internal protection features?

Yes, the device includes an integrated Zener diode between the gate and source terminals for protection against voltage spikes.