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STF3NK100Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 1000V 2.5A TO220FP. Review the specifications below when checking this part for your BOM.
The STF3NK100Z is an N-channel SuperMESH Power MOSFET with a 1 kV drain-source breakdown voltage and 2.5 A continuous current rating. It features a typical on-resistance of 6 Ohms and operates within a -55°C to +150°C junction temperature range. The device utilizes a TO-220-3 through-hole package, offering 25 W power dissipation. Key electrical parameters include a gate-source voltage limit of ±30 V, threshold voltage of 3 V, and gate charge of 18 nC. Switching characteristics show rise and fall times of 7.5 ns and 32 ns respectively.
Verify the specific datasheet revision and ordering information directly with STMicroelectronics or authorized distributors. Confirm that the TO-220-3 package variant matches your PCB footprint requirements. Ensure compliance with RoHS directives as indicated in official product specifications before finalizing procurement decisions.
Select this component when a high-voltage N-channel MOSFET with integrated gate protection is required. The SuperMESH technology provides improved performance over standard PowerMESH devices. Consider the thermal management capabilities of the TO-220-3 package for your specific power dissipation needs.
This part belongs to the SuperMESH series of high-voltage MOSFETs from STMicroelectronics. It represents an evolution of the established PowerMESH layout, focusing on lower on-resistance and superior switching performance. The series complements other high-voltage offerings like MDmesh products.
Direct replacements may include STD3NK100Z (DPAK package) or STF5NK100Z (TO-220FP package). Verify pinout compatibility and thermal resistance differences when substituting packages.
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