STL24N60DM2

Single FETs, MOSFETs Overview

The STL24N60DM2 is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh DM2 technology. It features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 15 A at case temperature. The typical on-resistance (Rds(on)) is 220 mOhms at 10 V gate drive. Key electrical parameters include a maximum gate charge (Qg) of 29 nC at 10 V and an input capacitance (Ciss) of 1055 pF at 100 V. The device operates within a junction temperature range of -55°C to +150°C and supports a power dissipation of 125 W.

Single FETs, MOSFETs Feature Summary

• MDmesh DM2 technology provides extremely low gate charge and input capacitance for optimized switching performance.
• Fast-recovery body diode with very low recovery charge and time, suitable for demanding high-efficiency converters.
• Zener-protected gate structure enhances ruggedness against transient voltage events.
• 100% avalanche tested to ensure reliability under inductive load switching conditions.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Bridge topologies
• Zero Voltage Switching (ZVS) applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as distribution channels may list different tape-and-reel or cut-tape options. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the procurement documentation matches the exact part number STL24N60DM2 to avoid substitution errors with similar MDmesh series components.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance of low conduction losses and fast switching speeds in high-voltage environments. The 600 V rating makes it appropriate for universal AC-DC inputs. Consider the PowerFlat 8x8 HV package for surface-mount applications needing compact footprints with adequate thermal handling capabilities compared to through-hole alternatives.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh DM2 series of super-junction power MOSFETs. It is designed using a strip layout and improved vertical structure to achieve low on-resistance. The series targets high-efficiency power conversion systems where minimizing switching losses and improving overall system efficiency are critical design requirements.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same family include STF24N60DM2 and STB24N60DM2, which share similar electrical characteristics but differ in packaging (TO-220FP and D2PAK respectively). Verify pinout compatibility and thermal resistance specifications before substituting to ensure mechanical fit and thermal performance meet design constraints.