STP200NF04

$1.36

Description：MOSFET N-CH 40V 120A TO220AB
Series：STripFET™ II
Mfr：STMicroelectronics
Package：Tube

SKU:ede4f0ca7b3b Category: Single FETs, MOSFETs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

STP200NF04 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 40V 120A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP200NF04

Description：MOSFET N-CH 40V 120A TO220AB
Series：STripFET™ II
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：210 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for STP200NF04

STP200NF04

Single FETs, MOSFETs Overview

The STP200NF04 is an N-channel Power MOSFET utilizing STMicroelectronics’ Single Feature Size strip-based process. It offers a drain-source voltage of 40 V, continuous drain current of 120 A, and maximum on-resistance below 0.0037 Ω. The device supports pulsed drain currents up to 480 A and total dissipation of 310 W at 25°C case temperature. It features rugged avalanche characteristics with single pulse energy rating of 1.3 J and peak diode recovery voltage slope of 1.5 V/ns.

Single FETs, MOSFETs Feature Summary

Developed using the Single Feature Size strip-based process for high packing density and low on-resistance.
Capable of handling rugged avalanche conditions with 100% avalanche testing verification.
Features exceptional dv/dt capability suitable for high-speed switching applications.

Single FETs, MOSFETs Applications

High current circuits requiring fast switching speeds
Automotive electronic systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required (TO-220, D2PAK, or I2PAK) as electrical ratings remain consistent across these form factors. Confirm that the application environment stays within the specified junction temperature range of -55°C to 175°C. Ensure gate drive voltages do not exceed the ±20 V absolute maximum rating to prevent dielectric breakdown.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses in a 40 V system. The standard threshold drive simplifies gate driver requirements compared to logic-level devices. Consider the thermal resistance values provided in the datasheet to calculate appropriate heatsinking for sustained 120 A operation.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET II family of power MOSFETs from STMicroelectronics. It shares core technology with variants like STB200NF04 and STB200NF04-1, differing primarily in physical packaging and shipping configuration rather than internal semiconductor structure or electrical performance specifications.

Single FETs, MOSFETs Replacement Considerations

Direct functional equivalents include STB200NF04 and STB200NF04-1. These parts share identical electrical parameters but utilize different packages (D2PAK and I2PAK respectively). Verify mechanical footprint compatibility before substitution.