Single FETs, MOSFETs STP8NK80Z product image

STP8NK80Z

$1.77
  • Description:MOSFET N-CH 800V 6.2A TO220AB
  • Series:SuperMESH™
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:08bacc213783 Category: Brand:

  
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STP8NK80Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 800V 6.2A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP8NK80Z

  • Description:MOSFET N-CH 800V 6.2A TO220AB
  • Series:SuperMESH™
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for STP8NK80Z

STP8NK80Z

Single FETs, MOSFETs Overview

The STP8NK80Z is an N-channel Power MOSFET from STMicroelectronics utilizing SuperMESH technology. It features a drain-source breakdown voltage of 800 V and a continuous drain current of 6.2 A. The device incorporates integrated Zener protection on the gate terminal. Key electrical parameters include a typical on-resistance of 1.3 Ohms and minimized gate charge. It is housed in a TO-220 package and undergoes 100% avalanche testing to ensure reliability under demanding conditions.

Single FETs, MOSFETs Feature Summary

  • SuperMESH technology optimization for significantly reduced on-resistance
  • Integrated Zener protection on the gate terminal
  • Extremely high dv/dt capability for demanding applications
  • 100% avalanche tested for enhanced reliability

Single FETs, MOSFETs Applications

  • Flyback converters
  • LED lighting systems
  • High-voltage power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official datasheet to ensure compatibility with your design requirements. Confirm that the component meets all relevant safety and environmental standards required for your specific application before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and robust gate protection are required. The SuperMESH technology offers improved performance over standard PowerMESH layouts. Ensure the thermal management solution supports the package type and expected power dissipation levels for reliable operation in the target environment.

Single FETs, MOSFETs Part Context

This part belongs to the SuperMESH series of N-channel Power MOSFETs designed by STMicroelectronics. The series represents an extreme optimization of the established strip-based PowerMESH layout, focusing on minimizing on-resistance while maintaining high dv/dt capability. It complements the broader portfolio of high-voltage MOSFETs available from the manufacturer.

Single FETs, MOSFETs Replacement Considerations

Check for compatible parts within the same SuperMESH family or other 800V N-channel MOSFETs with similar current ratings and Zener protection features. Verify pinout compatibility and thermal characteristics before substituting.

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