STS13N3LLH5

Single FETs, MOSFETs Overview

The STS13N3LLH5 is an N-channel Power MOSFET from STMicroelectronics, utilizing the proprietary STripFET™ V technology. It features a 30 V drain-source breakdown voltage and a continuous drain current of 13 A. The device offers an extremely low on-resistance (RDS(on)) of 0.006 Ω typical at VGS = 10 V, contributing to high efficiency. Packaged in an 8-pin SO-8 surface-mount case, it provides high avalanche ruggedness and low gate charge for reduced switching losses.

Single FETs, MOSFETs Feature Summary

• Utilizes fifth-generation STripFET™ V technology for optimized performance
• Achieves industry-leading figure of merit through very low on-state resistance
• Features high avalanche ruggedness for robust operation under stress
• Designed with low gate drive power losses and low switching gate charge

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring high efficiency
• Power management systems in portable electronics
• Low-voltage synchronous rectification applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official datasheet before procurement. Ensure the component matches the required thermal and electrical specifications for your design. Confirm availability through authorized distributors to avoid counterfeit parts. Check for any recent product lifecycle changes or obsolescence notices directly from STMicroelectronics documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a low RDS(on) and high current handling capability are critical for efficiency in 30 V applications. The SO-8 package suits space-constrained designs. Consider the thermal performance and avalanche energy ratings if operating in harsh environments. Compare gate charge requirements against driver capabilities to ensure optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' PowerFLAT and SO-8 MOSFET families, designed for general-purpose power switching. It complements other devices in the series by offering a balance between conduction losses and switching speed. The STripFET™ V technology represents a significant advancement in planar MOSFET design for low-voltage applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible substitutes within the same STMicroelectronics family that offer similar RDS(on) and current ratings. Verify that alternative packages maintain the same thermal characteristics. Ensure any replacement maintains compatibility with the existing gate drive circuitry and PCB layout constraints.