STW21N65M5

Single FETs, MOSFETs Overview

STW21N65M5 is an N-channel MDmesh V Power MOSFET featuring a 650 V drain-source breakdown voltage and a maximum continuous drain current of 17 A. It exhibits a static drain-source on-resistance of 0.150 Ω typ. and 0.179 Ω max at VGS = 10 V, ID = 8.5 A. The device operates within a junction temperature range of -55 °C to +150 °C, with a total power dissipation of 30 W at TC = 25 °C. Key dynamic parameters include a total gate charge of 50 nC typ., input capacitance of 1950 pF, and peak diode recovery voltage slope of 15 V/ns.

Single FETs, MOSFETs Feature Summary

• MDmesh V technology combining proprietary vertical process with horizontal layout for low on-resistance
• High dv/dt capability for robust switching performance
• 100% avalanche tested for enhanced reliability

Single FETs, MOSFETs Applications

• Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant against the datasheet order codes, as STW21N65M5 corresponds to the TO-247 form factor. Confirm environmental compliance grades such as ECOPACK specifications directly from manufacturer documentation before procurement. Ensure thermal management designs align with the specified junction-to-ambient resistance values provided in the official technical data.

Single FETs, MOSFETs Selection Notes

Select this component for high-power density applications requiring superior efficiency and outstanding performance. The MDmesh V technology provides unmatched on-resistance among silicon-based Power MOSFETs. Consider the TO-247 package for through-hole mounting requirements where higher thermal dissipation capabilities are necessary compared to surface-mount alternatives.

Single FETs, MOSFETs Part Context

The STW21N65M5 belongs to the STB/F/I/P/W21N65M5 family of N-channel MDmesh V Power MOSFETs. This series integrates innovative vertical process technology with the PowerMESH horizontal layout structure. The family includes variants in D²PAK, TO-220FP, I²PAK, TO-220, and TO-247 packages, all sharing similar electrical characteristics optimized for hard switching applications.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other members of the STB/F/I/P/W21N65M5 family (e.g., STF21N65M5, STI21N65M5) if different package types are required. Verify that alternative components maintain equivalent RDS(on), VDSS, and thermal resistance specifications to ensure circuit compatibility without redesign.