SUM85N03-06P-E3

Single FETs, MOSFETs Overview

The SUM85N03-06P-E3 is a silicon N-channel Power MOSFET from the Vishay Siliconix SUM series, utilizing TrenchFET technology. It features a TO-263 (D2PAK) surface-mount package and is designed for high-efficiency power switching applications. The component operates with a drain-source voltage rating of 30 V and supports a continuous drain current of 85 A. Key electrical parameters include a maximum on-resistance of 6 mΩ at a gate-source voltage of 10 V, ensuring low conduction losses. The device offers a power dissipation capacity of 275 W and is qualified for operation within an ambient temperature range of -55 °C to +175 °C junction temperature.

Single FETs, MOSFETs Feature Summary

• TrenchFET technology provides optimized specific on-resistance for improved efficiency.
• High thermal performance capability supporting significant power dissipation in compact packages.
• Enhanced avalanche ruggedness for robust operation under transient stress conditions.

Single FETs, MOSFETs Applications

• DC-DC converter modules
• Power factor correction circuits
• Load switch implementations

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix configuration against the manufacturer's latest datasheet to ensure compatibility with RoHS directives and halogen-free requirements. Confirm availability status as production lifecycles may change. Cross-reference the specific ordering number with authorized distributors to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low voltage drop and high current handling capabilities. Evaluate the thermal resistance characteristics relative to the PCB copper area to ensure adequate heat dissipation. Compare the gate charge specifications against drive circuit capabilities to optimize switching speed and minimize dynamic losses during operation.

Single FETs, MOSFETs Part Context

This part belongs to the SUM series of surface-mount MOSFETs, which are engineered for high-density power management solutions. The series leverages advanced planar trench technology to achieve superior performance metrics compared to traditional planar devices. These components are widely utilized in industrial and consumer electronics where space constraints and thermal efficiency are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for direct equivalents such as the SUM85N03-06 or updated revisions. Verify pinout compatibility and thermal pad configurations before substituting. Ensure that any alternative component meets or exceeds the original voltage, current, and on-resistance specifications.