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SUP60N02-4M5P-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 60A TO220AB. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SUP60N02-4M5P-E3 is an N-Channel TrenchFET power MOSFET designed for demanding applications. It features a 20V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The device exhibits a low on-resistance of 4.5mOhm. It is housed in a TO-220AB through-hole package, supporting operation up to 175°C junction temperature.
Verify the specific suffix E3 confirms lead-free compliance as per Vishay standards. Confirm the TO-220AB package variant matches your PCB footprint requirements. Ensure thermal management solutions support the specified junction temperature limits during operation.
Select this component when a 20V rating and 60A current capacity are required. The TO-220AB package suits through-hole assembly processes. Consider thermal dissipation needs given the 4.5mOhm on-resistance characteristics for efficient power handling.
This part belongs to the Vishay Siliconix SUP series of N-Channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The series is engineered for robust performance in various power electronics applications requiring reliable switching capabilities.
SUD50N04-8M8P-4GE3 is documented as a substitute option. Verify electrical parameters and pinout compatibility before implementation.
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