TIP115TU

Single Bipolar Transistors Overview

The TIP115TU is a PNP Epitaxial Silicon Darlington Transistor manufactured by onsemi. It features monolithic construction with built-in base-emitter shunt resistors. The device provides high DC current gain, rated at a minimum of 1000 at VCE = -4 V and IC = -1 A. It supports a collector current of -2 A and a collector-emitter voltage of -60 V. The component is housed in a TO-220 package.

Single Bipolar Transistors Feature Summary

• Monolithic construction with integrated base-emitter shunt resistors
• High DC current gain capability for efficient switching
• Low collector-emitter saturation voltage

Single Bipolar Transistors Applications

• Medium power linear applications
• Switching applications
• Industrial use

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the packing method. The datasheet indicates that the standard TIP115 part number corresponds to bulk packing, while the TU suffix typically denotes rail packing. Confirm the exact physical dimensions and pinout compatibility with your existing design before finalizing procurement to ensure proper mounting.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current gain and robust power handling in a single package. It serves as the complementary PNP device to the NPN TIP110, TIP111, and TIP112 series. Ensure the thermal management strategy accounts for the specified power dissipation limits at both ambient and case temperatures.

Single Bipolar Transistors Part Context

This component belongs to the TIP11x family of PNP Epitaxial Silicon Darlington Transistors. Originally developed by Fairchild Semiconductor, the product line was integrated into ON Semiconductor's portfolio following their acquisition. The series is designed for medium power applications, offering a complementary solution to the widely used NPN counterparts.

Single Bipolar Transistors Replacement Considerations

TIP117TU