TK12Q60W,S1VQ

Single FETs, MOSFETs Overview

The TK12Q60W,S1VQ is an N-channel MOSFET from Toshiba's DTMOSIV series, housed in a through-hole IPAK package. It features a 600V drain-source voltage rating and supports a continuous drain current of 11.5A at 25°C. The device exhibits a maximum on-resistance of 340mΩ at Vgs=10V and handles up to 100W power dissipation at case temperature. Key electrical characteristics include a gate charge of 18.5nC and an input capacitance of 890pF.

Single FETs, MOSFETs Feature Summary

• DTMOSIV technology for optimized switching performance
• Through-hole IPAK packaging for robust mounting
• High voltage capability suitable for power control

Single FETs, MOSFETs Applications

• Power supply circuits
• Motor drive systems
• Industrial control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix S1VQ corresponds to the IPAK through-hole package variant. Confirm RoHS compliance status with the manufacturer. Ensure thermal management requirements align with the 100W (Tc) dissipation rating. Check datasheet revisions for updated electrical limits before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling in through-hole designs. Compare Rds(on) and gate charge against surface-mount alternatives if board space is constrained. Validate thermal resistance parameters for the specific PCB layout or heatsink configuration intended for use.

Single FETs, MOSFETs Part Context

This part belongs to the TK12Q60 family of N-channel MOSFETs. It shares core specifications with variants like TK12V60W but differs in packaging and thermal characteristics. The DTMOSIV series represents Toshiba's fourth-generation trench MOSFET technology designed for efficiency.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600V 11.5A N-channel MOSFETs in IPAK packages. Verify pinout compatibility and thermal pad configurations. Cross-reference Rds(on) and Qg values to ensure equivalent switching performance in the target circuit.