TK200F04N1L,LXGQ

$3.47

Description：MOSFET N-CH 40V 200A TO220SM
Series：U-MOSVIII-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:34d0d40aa81e Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK200F04N1L,LXGQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 40V 200A TO220SM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK200F04N1L,LXGQ

Description：MOSFET N-CH 40V 200A TO220SM
Series：U-MOSVIII-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：0.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：214 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14920 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：175°C
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-220SM(W)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for TK200F04N1L,LXGQ

TK200F04N1L,LXGQ

Single FETs, MOSFETs Overview

The TK200F04N1L,LXGQ is an N-channel power MOSFET from Toshiba Semiconductor and Storage, belonging to the U-MOSVIII-H series. It features a TO-220SM(W) surface-mount package with AEC-Q101 automotive qualification. Key electrical parameters include a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 200 A at Ta. The device exhibits a maximum on-resistance (Rds(on)) of 0.9 mΩ at 100 A and 10 V. Gate charge (Qg) is 214 nC @ 10 V, with input capacitance (Ciss) of 14,920 pF @ 10 V. It supports a maximum power dissipation of 375 W (Tc), operates up to 175°C junction temperature, and has a gate-source voltage limit of ±20 V.

Single FETs, MOSFETs Feature Summary

Automotive-grade reliability certified under AEC-Q101 standards for robust performance in vehicle environments.
High-current capability enabled by low on-resistance technology within the U-MOSVIII-H series architecture.
Surface-mount TO-220SM(W) packaging designed for efficient thermal management and automated assembly.

Single FETs, MOSFETs Applications

Brushed DC motor drive circuits
Three-phase inverter systems for brushless motors
Semi-bridgeless Power Factor Correction (PFC) converters

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Toshiba documentation to ensure correct packaging and automotive grade specifications. Confirm that the supplier provides original manufacturer data sheets. Check for any specific handling requirements related to moisture sensitivity level 3. Ensure compatibility with your bill of materials before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in compact surface-mount formats. The 40V rating suits 12V automotive systems. Consider the thermal resistance of the TO-220SM(W) package for heat dissipation needs. Verify gate drive voltage compatibility with the specified Rds(on) test conditions.

Single FETs, MOSFETs Part Context

This device is part of Toshiba's U-MOSVIII-H family, optimized for automotive power switching. It complements other 40V N-channel MOSFETs like the XPMR7404PB, offering different package options for varying thermal and space constraints in modern electronic control units.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalent automotive-grade 40V N-channel MOSFETs. Ensure pinout and thermal characteristics match if replacing in existing designs.