TK33S10N1L,LQ

Single FETs, MOSFETs Overview

The TK33S10N1L,LQ is a silicon N-channel MOSFET from Toshiba's U-MOSVIII-H series, designed for automotive applications. It features a DPAK+ (TO-252-3) surface-mount package with a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 33 A at 25°C. The device achieves a maximum on-resistance (Rds(on)) of 9.7 mΩ at Vgs = 10 V and Id = 16.5 A. Key electrical parameters include a gate charge (Qg) of 33 nC @ 10 V, input capacitance (Ciss) of 2250 pF @ 10 V, and a threshold voltage (Vgs(th)) max of 2.5 V @ 500 µA. It supports a maximum power dissipation of 125 W (Tc), operates up to 175°C junction temperature, and holds AEC-Q101 qualification.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle environments.
• Advanced U-MOSVIII-H technology enables low conduction losses through minimized on-resistance while maintaining high current handling capability.
• Optimized switching characteristics with reduced gate charge and capacitance values facilitate efficient operation in high-frequency power circuits.

Single FETs, MOSFETs Applications

• Automotive power management systems requiring AEC-Q101 compliance
• High-current DC-DC converter stages
• Motor control driver circuits

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required package variant; LQ denotes specific tape-and-reel packaging. Confirm the component carries the official AEC-Q101 certification mark for automotive use. Ensure the datasheet version aligns with the requested revision level. Check for RoHS compliance status if restricted substances are a constraint. Validate the manufacturer source directly from Toshiba Semiconductor and Storage authorized channels.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-channel MOSFET with high current capacity is needed for automotive designs. The 9.7 mΩ on-resistance at 10 V drive offers efficiency benefits over higher resistance alternatives. The DPAK+ package provides thermal performance suitable for moderate power densities. Consider the 33 nC gate charge for driver compatibility. Verify that the 175°C operating temperature meets the system's thermal requirements.

Single FETs, MOSFETs Part Context

This part belongs to the TK33S10 family of automotive MOSFETs. It shares the core die technology with variants like TK33S10N1L,LXHQ but differs in packaging and reel specifications. The U-MOSVIII-H platform represents Toshiba's latest generation of trench gate MOSFETs optimized for low loss and high reliability in demanding automotive power applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 100 V rating, 33 A current, and DPAK+ package. Verify pinout compatibility and thermal resistance values. Cross-reference AEC-Q101 certification status. Evaluate Rds(on) and Qg differences for circuit impact.