TK7R0E08QM,S1X

Single FETs, MOSFETs Overview

The TK7R0E08QM,S1X is a silicon N-channel MOSFET from Toshiba's UMOS X-H series, housed in a TO-220-3 through-hole package. It features an 80V drain-source voltage rating and a continuous drain current of 64A at case temperature. The device exhibits a maximum on-resistance of 7mΩ at 10V gate drive. Key electrical parameters include a gate charge of 39nC, threshold voltage of 3.5V, and power dissipation of 87W. It supports a maximum operating temperature of +175°C with switching times of 60ns turn-on and 89ns turn-off.

Single FETs, MOSFETs Feature Summary

• Utilizes UMOS X-H technology for enhanced performance
• Capable of high-temperature operation up to 175°C
• Designed for low conduction losses via optimized on-resistance

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix S1X against official Toshiba documentation to confirm exact packaging and reel specifications. Ensure thermal management solutions align with the 87W dissipation rating at the intended ambient conditions. Cross-reference the UMOS X-H series datasheet for precise switching characteristics under varying load conditions before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this component when an 80V rating and 7mΩ on-resistance are required in a TO-220-3 package. Consider the 64A current capability relative to your thermal design constraints. Compare gate charge values against driver capabilities to ensure efficient switching speeds without excessive drive power requirements.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's UMOS X-H series of silicon N-channel MOSFETs. These devices are engineered for general-purpose power switching applications requiring robust performance in standard through-hole packages. The series emphasizes reliability and thermal stability for industrial and consumer electronics environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic cross-references may not match the specific UMOS X-H architecture or thermal characteristics.