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TLP250(TOJS,F) is listed in the Isolators - Gate Drivers range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is PHOTOCOUPLER. Review the specifications below when checking this part for your BOM.
The TLP250(TOJS,F) is a high-speed isolated gate driver optocoupler manufactured by Toshiba Semiconductor and Storage. It integrates an aluminum gallium arsenide light-emitting diode with an integrated photodetector to provide electrical isolation for power switching applications. The device features a push-pull output stage capable of delivering peak currents suitable for driving IGBTs and power MOSFETs. It operates within a specified supply voltage range and provides robust signal transmission across the isolation barrier, ensuring reliable performance in demanding power electronics environments.
Verify the specific suffix TOJS against official Toshiba documentation to confirm package type and certification status. Ensure compatibility with existing PCB footprints and isolation requirements before procurement. Cross-reference ordering information with authorized distributors to avoid counterfeit components.
Select this component when high-speed isolation is required for driving IGBTs or MOSFETs. Consider the push-pull output capability for efficient switching. Verify that the isolation voltage and operating temperature range meet the specific application constraints compared to standard logic output optocouplers.
This part belongs to the TLP250 series of isolated gate drivers from Toshiba. The series includes variants such as TLP250(F), TLP250H(F), and TLP250(TP1,F). These devices are widely used in industrial motor drives and power conversion systems where reliable electrical isolation is critical for safety and noise immunity.
It serves as an isolated gate driver optocoupler, providing high-speed signal transmission and electrical isolation for driving IGBTs and power MOSFETs.
Yes, it features a push-pull output stage designed to deliver sufficient current for driving power semiconductor gates.
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