Single FETs, MOSFETs TP0610K-T1 product image

TP0610K-T1

$0.20
  • Description:MOSFET P-CH 60V 185MA SOT23-3
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)

SKU:55c1e3844a61 Category: Brand:

  
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TP0610K-T1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 185MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TP0610K-T1

  • Description:MOSFET P-CH 60V 185MA SOT23-3
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:185mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.7 nC @ 15 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:23 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):350mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for TP0610K-T1

TP0610K-T1

Single FETs, MOSFETs Overview

The TP0610K-T1 is a P-Channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology in an SOT-23 (TO-236) package. It features a drain-source voltage of -60 V and a continuous drain current of -185 mA at 25 °C. The on-resistance is 6 Ω at VGS = -10 V, with a gate threshold voltage ranging from -1 to -3 V. Key dynamic parameters include a total gate charge of 1.7 nC, input capacitance of 23 pF, and turn-on time of 20 ns. Power dissipation is rated at 350 mW at 25 °C, operating within a junction temperature range of -55 to 150 °C.

Single FETs, MOSFETs Feature Summary

  • TrenchFET power MOSFET structure for optimized performance
  • High-side switching capability with low offset error voltage
  • Fast switching speed with low input capacitance
  • 2000 V electrostatic discharge protection

Single FETs, MOSFETs Applications

  • Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
  • Battery operated systems
  • Power supply converter circuits
  • Solid-state relays

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number TP0610K-T1 requires a suffix such as -E3 or -GE3 to denote lead-free and halogen-free compliance. Confirm RoHS directive 2002/95/EC compliance requirements match your manufacturing standards. Ensure the package type matches the SOT-23 footprint dimensions provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for high-side switching applications requiring low on-resistance and fast response times. The device is suitable for low-voltage operations and easily driven without buffer stages. Consider the thermal resistance of 350 °C/W and the 350 mW power dissipation limit when designing heat management strategies for surface-mounted FR4 boards.

Single FETs, MOSFETs Part Context

This component belongs to the TP0 series of P-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device is designed for surface mount applications, specifically in the SOT-23 package, offering a compact solution for space-constrained electronic designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include TP0610K-T1-E3 and TP0610K-T1-GE3, which are lead-free and halogen-free variants of the same device. Verify pinout compatibility and electrical specifications before substitution.

Single FETs, MOSFETs FAQ

What is the typical gate threshold voltage for the TP0610K?

The typical gate threshold voltage (VGS(th)) is -2 V, with a specified range from -1 V to -3 V.

Does the TP0610K offer ESD protection?

Yes, the device provides 2000 V electrostatic discharge (ESD) protection.

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is -800 mA.

TP0610K-T1TP0610K-T1
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