TPH1R005PL,L1Q

Single FETs, MOSFETs Overview

The TPH1R005PL,L1Q is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage, belonging to the U-MOSIX-H series. It utilizes Silicon technology and features a surface-mount 8-SOP Advance (5x5) package, also identified as 8-PowerVDFN. The device supports a drain-source voltage of 40 V and a continuous drain current of 150 A at case temperature. Key electrical parameters include a maximum gate-source voltage of ±20 V, a gate charge of 74 nC at 10 V, and an input capacitance of 7200 pF at 20 V. The on-resistance is specified at 0.5 mΩ under standard test conditions, with a threshold voltage of 2.4 V at 500 µA. Power dissipation ratings are 960 mW at ambient temperature and 132 W at case temperature, supporting a junction temperature up to 175°C.

Single FETs, MOSFETs Feature Summary

• Advanced U-MOSIX-H silicon technology for low on-resistance performance
• Surface-mount 8-SOP Advance package optimized for thermal efficiency
• High current handling capability suitable for power switching applications

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor driver stages
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the official Toshiba datasheet before procurement. Confirm that the 8-SOP Advance package dimensions match your PCB footprint requirements. Ensure that the supply chain source provides genuine Toshiba Semiconductor and Storage products to guarantee parameter consistency and reliability standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V N-channel MOSFET with ultra-low on-resistance is required in a compact surface-mount form factor. Consider the 150 A current rating and 175°C junction temperature limit for high-power density designs. Evaluate the thermal resistance characteristics inherent to the 8-SOP Advance package to ensure adequate heat dissipation in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOSIX-H series, which focuses on reducing conduction losses through advanced cell structure optimization. The TPH1R005PL variant specifically targets low-voltage, high-current applications where efficiency and thermal performance are critical constraints within space-limited surface-mount assemblies.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba cross-reference documentation for verified substitutes. Do not assume pin-compatible alternatives from other manufacturers without verifying electrical parameter equivalence and package dimensional accuracy.