TPN1600ANH,L1Q

Single FETs, MOSFETs Overview

The TPN1600ANH,L1Q is a single N-channel enhancement mode MOSFET from Toshiba's U-MOSVIII-H series, utilizing silicon technology. It features a TSON-8 surface-mount package with a drain-source breakdown voltage of 100 V and a continuous drain current of 36 A. The device exhibits a low on-resistance of 13 mOhms at room temperature, supporting a power dissipation of 42 W. Gate specifications include a threshold voltage of 4 V, a gate charge of 19 nC, and a maximum gate-source voltage of ±20 V. Switching characteristics show rise and fall times of 5 ns and 6.2 ns respectively, with an operating temperature range spanning -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• U-MOSVIII-H technology enables high-density circuit designs with effective protection in small scaled applications.
• Low on-resistance facilitates efficient power management and reduced conduction losses.
• Wide operating temperature range supports reliability in demanding thermal environments.

Single FETs, MOSFETs Applications

• General regulation and voltage reference functions
• Over-voltage protection circuits
• High density circuit designs requiring customized effective protection

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L1Q against official Toshiba documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component meets RoHS requirements for your target market. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and supply chain integrity before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 100 V N-channel MOSFET with high current handling capabilities. The TSON-8 package is suitable for space-constrained designs. Consider the 13 mOhm on-resistance for efficiency needs and verify that the switching speeds align with the system's frequency requirements. Confirm thermal management strategies are adequate for the 42 W power dissipation rating.

Single FETs, MOSFETs Part Context

This part belongs to the TPN1600ANH series manufactured by Toshiba Semiconductor and Storage. It is classified as a discrete semiconductor transistor within the MOSFET category. The U-MOSVIII-H trademark indicates the specific generation of silicon MOSFET technology used, focusing on performance optimization for modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic cross-references may not match the specific U-MOSVIII-H characteristics or pinout configurations required for direct replacement without design modification.