TRD136DT4

Single Bipolar Transistors Overview

The TRD136DT4 is a high voltage fast-switching NPN power transistor manufactured using high voltage Multi-Epitaxial Planar technology. It features a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory Reverse Biased Safe Operating Area (RBSOA). The device includes an integrated antiparallel collector-emitter diode and is supplied in a TO-252 (DPAK) package on tape and reel. Key electrical ratings include a Collector-Emitter Voltage (VCEO) of 400 V, a Collector Current (IC) of 3 A, and a Total Dissipation (Ptot) of 20 W at Tc ≤ 25°C.

Single Bipolar Transistors Feature Summary

• High voltage capability
• Very high switching speed
• Integrated antiparallel collector-emitter diode

Single Bipolar Transistors Applications

• Electronic ballast for fluorescent lighting
• Electronic transformer for halogen lamps

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and status, as the provided documentation indicates preliminary data subject to change without notice. Confirm that the TO-252 (DPAK) package matches your board layout requirements. Ensure compliance with environmental directives such as ECOPACK specifications if applicable to your manufacturing standards. Review absolute maximum ratings carefully to prevent device failure during operation.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage handling and rapid switching performance. The integrated free-wheeling diode simplifies circuit design by eliminating the need for external components in certain configurations. Consider the thermal dissipation capabilities when designing heat sinks, as total power dissipation is specified at a case temperature of 25°C. Evaluate the low spread of dynamic parameters for consistent performance across production batches.

Single Bipolar Transistors Part Context

This part belongs to STMicroelectronics' portfolio of high voltage fast-switching NPN power transistors. It utilizes Multi-Epitaxial Planar technology designed for medium voltage capability and high switching speeds. The product line emphasizes minimum lot-to-lot spread for reliable operation and improved specifications such as lower leakage current and tighter gain ranges compared to previous generations.

Single Bipolar Transistors Replacement Considerations

TR136DT4

Single Bipolar Transistors FAQ

What technology is used to manufacture the TRD136DT4?

The device is manufactured using high voltage Multi-Epitaxial Planar technology.

Does the TRD136DT4 include an internal diode?

Yes, it features an integrated antiparallel collector-emitter diode.

What is the maximum collector current rating?

The maximum collector current (IC) is rated at 3 A.