TSF30L120C

Diode Arrays Overview

The TSF30L120C is a dual common cathode Schottky rectifier manufactured by Taiwan Semiconductor. It features a silicon Trench Schottky technology housed in an ITO-220-3 through-hole package. The device supports a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 30 A per diode. Key electrical characteristics include a typical forward voltage of 780 mV at rated current, a low reverse leakage current of 15 µA, and a peak forward surge current capability of 160 A. The component operates within a junction temperature range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench Schottky technology for enhanced efficiency and reduced power loss
• Incorporates guardring design for improved overvoltage protection stability
• Provides high surge current handling capability for robust circuit performance

Diode Arrays Applications

• High-frequency DC-DC converter circuits
• Free-wheeling rectification in power supplies
• Polarity protection in electronic systems

Diode Arrays Procurement Notes

Verify the specific suffix against official datasheets, as packing codes or halogen-free status may vary. Confirm RoHS compliance and REACH status with the supplier. Ensure the ITO-220-3 package matches your PCB footprint requirements. Check for any recent part number revisions that might affect mechanical dimensions or electrical parameters before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for synchronous rectification or bridge applications. The 120 V rating suits low-voltage DC-DC converters. Consider the 30 A current capacity and thermal management needs for the TO-220 style package. Verify that the 150 °C maximum junction temperature aligns with the system's thermal design constraints.

Diode Arrays Part Context

This component belongs to the Schottky diode and rectifier category within Taiwan Semiconductor's discrete semiconductor portfolio. It utilizes silicon-based Trench Schottky technology to achieve lower forward voltage drops compared to standard PN junction diodes. The dual common cathode arrangement allows for efficient use in full-wave rectification topologies without requiring separate components.

Diode Arrays Replacement Considerations

Public confirmed substitutes include the STPS30L120CFP from STMicroelectronics and the MBRF30L120CTC0G from Taiwan Semiconductor. These alternatives share similar 120 V and 30 A ratings but may differ in forward voltage specifications or packaging details. Verify pinout compatibility and thermal resistance values before substitution.