TSM250NB06CV

Single FETs, MOSFETs Overview

The TSM250NB06CV is an N-Channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 6 A at ambient temperature, rising to 27 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 25 mΩ at 10 V gate drive. Key electrical parameters include a Gate Charge (Qg) of 23 nC and Input Capacitance (Ciss) of 1307 pF. Thermal performance specifies power dissipation up to 1.9 W at ambient and 42 W at case temperatures, with an operating junction temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• N-Channel enhancement mode construction utilizing trench technology for low on-resistance
• Surface mount design in an 8-PDFN package optimized for thermal efficiency
• High voltage blocking capability suitable for low-voltage power switching applications

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management modules
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CV' against the manufacturer's official datasheet to confirm exact pinout, marking codes, and packaging specifications. Ensure the selected variant matches the required thermal and electrical constraints for the target application environment before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component based on its 60 V rating and 25 mΩ Rds On characteristics. Consider the 8-PDFN package dimensions for PCB layout compatibility. Evaluate thermal requirements to ensure adequate heat sinking or copper area utilization for the specified power dissipation limits.

Single FETs, MOSFETs Part Context

This part belongs to the TSM250 series of N-Channel Power MOSFETs from Taiwan Semiconductor. These devices are designed for general-purpose power switching applications requiring efficient energy conversion. The series offers various current ratings and package options to suit different board space and thermal management needs.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible parts within the same voltage and current class. Verify that alternative components match the 8-PDFN footprint and meet the 60 V / 25 mΩ performance criteria.