TSM4806CS RLG

Single FETs, MOSFETs Overview

The TSM4806CS RLG is a single N-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor. It features a maximum drain-source voltage of 20 V and a continuous drain current of 28 A. The device utilizes advanced high cell density trench technology to achieve low gate charge, specified at 12.3 nC. On-state resistance is rated at a maximum of 20 mΩ at VGS = 4.5 V, 25 mΩ at VGS = 2.5 V, and 31 mΩ at VGS = 1.8 V. It is housed in an SOP-8 package with surface mount installation.

Single FETs, MOSFETs Feature Summary

• Advanced High Cell Density Trench Technology
• Low Gate Charge

Single FETs, MOSFETs Applications

• Networking DC-DC Power System
• Load Switch

Single FETs, MOSFETs Procurement Notes

Verify the component against the official datasheet version B1710 to confirm electrical parameters match the required specifications. Ensure the SOP-8 package dimensions align with the PCB footprint design. Confirm halogen-free status according to IEC 61249-2-21 definition if environmental compliance is required for the assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 20 V N-channel MOSFET with low on-resistance and fast switching characteristics. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate threshold voltage range supports the intended drive voltage levels for optimal performance in load switch or power system configurations.

Single FETs, MOSFETs Part Context

This part belongs to the TSM4806 series of 20V N-Channel MOSFETs from Taiwan Semiconductor. It is designed for general-purpose power switching applications. The device is available in a standard SOP-8 package suitable for automated surface mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and absolute maximum ratings before replacing components in existing designs.