TSM70N600CP

Single FETs, MOSFETs Overview

The TSM70N600CP is a single N-channel power MOSFET manufactured by Taiwan Semiconductor. It utilizes Super-Junction technology to achieve high performance with a low figure-of-merit. The device features a 700V drain-source breakdown voltage and an 8A continuous drain current rating. Key electrical parameters include a maximum on-resistance of 500 mOhms, a gate charge of 12.6 nC, and a threshold voltage of 2V. It operates within a temperature range of -55°C to +150°C and offers a power dissipation capacity of 83W in a DPAK-3 (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Super-Junction technology implementation for optimized efficiency
• High ruggedness and commutation performance capabilities
• Low figure-of-merit characteristics for enhanced thermal management

Single FETs, MOSFETs Applications

• Power supply systems
• Lighting applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation, as the provided data references 'TSM70N600CP ROG'. Confirm RoHS compliance status and REACH-SVHC details directly from the manufacturer's datasheet before procurement. Ensure the ordering part number matches the required packaging format, such as Reel or Cut Tape, as availability may vary by region and distributor constraints.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with moderate current ratings. The 700V rating suits industrial and consumer power conversion topologies. Consider the 500 mOhm on-resistance for conduction loss calculations. Verify that the DPAK-3 package thermal resistance meets the system's heat dissipation requirements under maximum load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the TSM70 series of N-channel Power MOSFETs from Taiwan Semiconductor. It shares the Super-Junction architecture found in related models like the TSM60N600CHC5G but differs in voltage rating and package configuration. The series emphasizes high ruggedness and low switching losses for efficient power management solutions.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 700V Vds, 8A Id, and TO-252-3 package specifications with alternative manufacturers' datasheets.