TSM80N950CP

$2.18

Description：800V, 6A, SINGLE N-CHANNEL POWER
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR)

SKU:ab8c720bde90 Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM80N950CP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 800V, 6A, SINGLE N-CHANNEL POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM80N950CP

Description：800V, 6A, SINGLE N-CHANNEL POWER
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.6 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：691 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for TSM80N950CP

TSM80N950CP

Single FETs, MOSFETs Overview

The TSM80N950CP is an N-channel Power MOSFET manufactured by Taiwan Semiconductor Corporation, utilizing Superjunction technology. It features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 6 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 800 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge (Qg) of 19.6 nC, input capacitance (Ciss) of 691 pF, and threshold voltage (Vgs(th)) up to 4 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 110 W.

Single FETs, MOSFETs Feature Summary

Superjunction structure for optimized switching performance
High voltage capability suitable for demanding power applications
Low thermal resistance design for efficient heat dissipation

Single FETs, MOSFETs Applications

High-voltage DC-DC converters
Motor control circuits
Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CP' against official datasheets to confirm package type and tape/reel specifications. Confirm RoHS compliance status and check for obsolescence notices from Taiwan Semiconductor. Ensure the source document explicitly lists this exact part number variant rather than generic family members.

Single FETs, MOSFETs Selection Notes

Select based on the 800 V breakdown voltage and 6 A current rating requirements. Compare Rds(on) values at 10 V Vgs against circuit efficiency targets. Verify TO-252 (DPAK) package compatibility with PCB footprint and thermal management strategy. Check gate charge parameters for driver capability matching.

Single FETs, MOSFETs Part Context

This component belongs to the TSM80 series of high-voltage N-channel MOSFETs from Taiwan Semiconductor. The series utilizes Superjunction technology to achieve low on-resistance in high-voltage packages. The TSM80N950CP specifically denotes the 800V, 6A variant in the DPAK-3 surface-mount package.