TW054V65C,LQ

Single FETs, MOSFETs Overview

The TW054V65C is a silicon carbide N-channel MOSFET from Toshiba Semiconductor and Storage, featuring an integrated third-generation SiC Schottky barrier diode. It offers a drain-source voltage of 650 V and a typical on-resistance of 54 mΩ at VGS = 18 V. The device operates with a threshold voltage between 3.0 V and 5.0 V and supports a recommended gate drive of 18 V on and 0 V off. Packaged in a DFN8x8 format, it provides high thermal efficiency with a channel-to-case thermal resistance of 1.133 °C/W and a maximum junction temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

• Third-generation chip design incorporating a built-in SiC Schottky barrier diode for low forward voltage characteristics.
• High breakdown voltage capability combined with low drain-source on-resistance to minimize conduction losses.
• Enhanced immunity to malfunction due to a high threshold voltage range suitable for robust switching applications.
• Optimized gate drive requirements allowing for efficient control using standard 18 V turn-on signals.

Single FETs, MOSFETs Applications

• Switching Voltage Regulators

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status and datasheet version before finalizing designs, as manufacturers may update specifications without notice. Confirm compliance with environmental directives such as RoHS through official channels. Ensure that application circuits account for electrostatic discharge sensitivity and adhere to the recommended derating concepts outlined in the Toshiba Semiconductor Reliability Handbook for long-term operational stability.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low conduction losses and fast switching speeds. The integrated body diode eliminates the need for external parallel diodes in synchronous rectification topologies. Consider the DFN8x8 package for its thermal performance and compact footprint. Validate that the gate drive circuitry can supply the required 18 V signal while respecting the absolute maximum ratings for reliability.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's silicon carbide MOSFET portfolio, designed for power electronics demanding high efficiency and thermal resilience. The DFN8x8 package facilitates effective heat dissipation through the exposed drain pad. As a third-generation device, it represents an evolution in SiC technology aimed at reducing switching losses and improving overall system performance in modern power conversion architectures.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the function of the internal diode in the TW054V65C?

The device features a built-in SiC Schottky barrier diode, which provides a low forward voltage path for reverse current flow, eliminating the need for an external freewheeling diode in many circuits.

How does the threshold voltage affect operation?

The threshold voltage ranges from 3.0 V to 5.0 V, providing high immunity to false triggering or malfunction due to voltage spikes during switching operations.