UF3C120400K3S

Single FETs, MOSFETs Overview

The UF3C120400K3S is a 1200 V, 410 mΩ Silicon Carbide Field-Effect Transistor (SiC FET) manufactured by UnitedSiC. It utilizes a cascode configuration integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device. The component operates within a maximum junction temperature of 175 °C and is housed in a TO-247-3L package. Designed for high-efficiency switching, it features low gate charge and superior reverse recovery characteristics suitable for inductive load applications.

Single FETs, MOSFETs Feature Summary

• Standard gate drive compatibility enabling direct replacement for silicon IGBTs and superjunction devices
• Cascode architecture combining SiC JFET and Si MOSFET for robust normally-off operation
• Low intrinsic capacitance and excellent reverse recovery performance for efficient switching

Single FETs, MOSFETs Applications

• Switching inductive loads
• Applications requiring standard gate drive interfaces
• High-frequency power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as this specific part number is associated with UnitedSiC rather than onsemi. Confirm the datasheet revision and package type match your design requirements. Ensure that the sourcing channel provides authentic components from the original equipment manufacturer to guarantee electrical specifications and reliability standards are met.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-off behavior is required without complex gate drive circuitry. The cascode design simplifies integration into existing silicon-based topologies. Consider the thermal management capabilities provided by the TO-247-3L package for high-power density designs requiring reliable operation at elevated temperatures.

Single FETs, MOSFETs Part Context

This device belongs to the third-generation SiC cascode family. It shares architectural similarities with other models like the UF3C170400K3S but offers a lower voltage rating of 1200 V. The series is engineered to bridge the gap between traditional silicon performance and wide-bandgap efficiency, providing a drop-in solution for upgrading legacy power supplies.

Single FETs, MOSFETs Replacement Considerations

Official substitutes include UF3C120080K3S and UF3C120080B7S. Verify pinout compatibility and thermal resistance values before substitution to ensure system integrity.