RF Diode UM7006F product image

UM7006F

$23.51
  • Description:RF DIODE PIN 600V 100000W
  • Series:-

SKU:b956431f5197 Category: Brand:

  
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UM7006F is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 600V 100000W. Review the specifications below when checking this part for your BOM.

RF Diode specifications for UM7006F

  • Description:RF DIODE PIN 600V 100000W
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):600V
  • Current - Max:-
  • Capacitance @ Vr, F:0.9pF @ 100V, 1MHz
  • Resistance @ If, F:1Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):100000 W
  • Operating Temperature:-65°C ~ 175°C
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for UM7006F

UM7006F

RF Diode Overview

The UM7006F is a PIN diode manufactured by Microchip Technology, designed for high-power applications. It features a silicon construction with a hermetic MELF package. Key electrical parameters include a reverse voltage of 600 V and a maximum diode capacitance of 900 fF. The device exhibits a maximum series resistance of 1 Ohm at maximum intermediate frequency and a reverse current of 10 uA. Carrier lifetime is specified at 2.5 us. The component operates within a temperature range from -65 C to +175 C.

RF Diode Feature Summary

  • Hermetic sealing in a MELF package ensures reliability in harsh environments
  • High reverse voltage capability suitable for power switching applications
  • Low capacitance design supports high-frequency signal handling

RF Diode Applications

  • High power RF switching circuits
  • Attenuator modules requiring wide dynamic range
  • Protective limiting devices in transmission lines

RF Diode Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm pinout and tolerance variations. Confirm that the hermetic seal integrity meets the required environmental standards for the intended deployment. Ensure compatibility with existing thermal management systems given the operating temperature limits.

RF Diode Selection Notes

Select this component when high reverse voltage and low capacitance are critical requirements. The hermetic package is necessary for applications exposed to extreme conditions. Evaluate the carrier lifetime specification against the required switching speed needs. Compare the series resistance value with system loss budgets.

RF Diode Part Context

This part belongs to the PIN diode category within Microchip's semiconductor portfolio. It is classified under diodes and rectifiers. The device utilizes silicon technology optimized for high-power performance. It serves as a specialized component for radio frequency and microwave engineering tasks.

RF Diode Replacement Considerations

Consult the official datasheet for direct pin-compatible substitutes. Verify that any alternative component matches the 600 V reverse voltage rating and 900 fF capacitance limit. Ensure the replacement also offers hermetic sealing if environmental protection is required.

UM7006FUM7006F
$23.51
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