V10KM45DU-M3/I

Diode Arrays Overview

The V10KM45DU-M3/I is a high current density surface-mount Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a FlatPAK 5 x 6 package with separated cathode configuration, providing dual diodes rated for a maximum repetitive peak reverse voltage of 45 V and an average forward current of 2 x 5 A per diode. The device exhibits ultra-low forward voltage characteristics, achieving 0.38 V at 2.5 A and 0.44 V at 5 A when the junction temperature is 125 °C. It supports a peak forward surge current of 100 A and operates within a junction temperature range of -40 to +175 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses.
• Features a FlatPAK 5 x 6 case with matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards.
• Includes M3 suffix compliance for halogen-free and RoHS-compliant materials, meeting JESD 201 class 2 whisker test requirements.

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering code against the datasheet to ensure correct packaging quantity and delivery mode. The /I suffix indicates a base quantity of 6000 units in a 13-inch diameter plastic tape and reel. Confirm material categorization compliance and AEC-Q101 qualification status if automotive grade components are required for the intended application.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency operation and compact surface-mount solutions. The separated cathode configuration allows independent control of each diode. Ensure thermal management accounts for the junction-to-ambient thermal resistance of 100 °C/W when operating without an infinite heat sink. Validate performance under expected ambient temperatures using the provided derating curves.

Diode Arrays Part Context

This part belongs to the V10KM45DU series of high current density surface-mount Trench MOS Barrier Schottky Rectifiers from Vishay General Semiconductor. The product line emphasizes low power losses through advanced semiconductor technology. The M3 suffix denotes standard environmental compliance, while HM3 variants offer additional automotive qualification.

Diode Arrays Replacement Considerations

No verified substitute part numbers are documented in the official datasheet.

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 2.5 A?

The typical instantaneous forward voltage is 0.49 V at 2.5 A with a junction temperature of 25 °C.

How does the forward voltage change at elevated temperatures?

At a junction temperature of 125 °C, the forward voltage drops to 0.38 V at 2.5 A and 0.44 V at 5 A.

What is the maximum DC forward current rating?

The maximum DC forward current is 5 A per diode when mounted on an infinite heatsink, or 3.3 A when mounted on the recommended pad area.